VI Systems develops novel yellow laser diode emitting at 599 to 605 nm

This article courtesy of Laser Focus World.

The new LDs are based on aluminum gallium indium phosphide [(AlxGa1–x)0.5In0.5P] on GaAs substrates.
The device emits a narrow beam in the vertical direction (fast axis) with a full width at half maximum (FWHM) of 24°. A total of 0.8 W optical output power in pulsed mode operation was realized for a laser with a 1 mm cavity length and 50 µm stripe width, being limited by the catastrophic optical damage of unpassivated uncoated mirrors.